TWINSCAN NXE:3400C
The TWINSCAN NXE:3400C lithography system supports EUV volume production at the 7 and 5 nm nodes.
EUV light wavelength
Resolution
Projection optics
Wafers per hour
At dose: 20 mJ/cm²
Key features & benefits
The TWINSCAN NXE:3400C is the successor of the NXE:3400B and will support EUV volume production at the 7 and 5 nm nodes at a higher productivity.
Combining high productivity, excellent image resolution, matched overlay to EUV NXE and ArFi NXT tools and focus performance, the TWINSCAN NXE:3400C provides lithography capability complementary to ASML’s ArFi technology. Improvements on the EUV source industrialization, overlay, focus and productivity enable a robust solution for cost-effective volume production starting in the second half of 2019.
01. Productivity
The 300 mm wafer throughput specification for the NXE:3400C is larger than or equal to 170 wafers per hour at a dose of 20 mJ/cm2. Throughput is larger than or equal to 135 wafers per hour at a dose of 30 mJ/cm2.
02. Optics
The NXE:3400C features an all-reflective 4x reduction lens assembly from Zeiss with a maximum exposure field of 26 x 33 mm.
The system is equipped with projection optics with a numerical aperture (NA) of 0.33 and an illuminator with an operating range sigma of 0.06–1 to maintain high productivity while enabling low k1 and a resolution of 13 nm. In-situ measurement and corrections per wafer of the optics and stages enable maximum imaging, overlay and CDU performance for each wafer exposed when imaging at low k1.
03. Imaging performance
The NXE:3400C can achieve a dedicated chuck overlay of 1.4 nm and a matched-machine overlay of 1.5 nm.
Overlay accuracy is measured over the whole field and over the whole wafer. Wafer alignment occurs at the measurement position with target detection using the ORION alignment sensor with ASML's proven phase grating alignment technique. The NXE:3400C incorporates the second-generation level sensor, based on UV light source that reduces process dependencies from product wafers.
